Silicon carbonitride films by remote hydrogen-nitrogen plasma CVD from a tetramethyldisilazane source

Journal of the Electrochemical Society

Volumn 151, Issue 11, 2004, Pages

  Wrobel A M ^a   Blleszczyk Lezak I ^a   Walkiewicz Pietrzykowska, A ^a   Bielinski D M ^b   Aoki, T ^c   Hatanaka, Y ^c  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; HYDROGENATION; SPUTTER DEPOSITION; TOXICITY;

FRICTION COEFFICIENTS; PHOTONICS; PLASMA GENERATION; SILICON CARBONITRIDE FILMS;

SILICON COMPOUNDS;

EID: 10944230959     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1805522     Document Type: Article

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