IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 340-344

  Vetter, M ^a,b   Martin I ^a   Orpella, A ^a   Puigdollers, J ^a   Voz, C ^a   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b C/Jordi Girona Salgado 1 3 ^*  (Spain)

Author keywords

Crystalline silicon; Passivation; Silicon carbide; Silicon carbonitride; Solar cell

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY GAP; INFRARED SPECTROSCOPY; LEAST SQUARES APPROXIMATIONS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON SOLAR CELLS;

CRYSTALLINE SILICON; SILICON CARBONITRIDE;

AMORPHOUS FILMS;

EID: 1442360277     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.125     Document Type: Conference Paper

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