Silicon carbonitride films produced by remote hydrogen microwave plasma CVD using a (dimethylamino) dimethylsilane precursor

Chemical Vapor Deposition

Volumn 11, Issue 1, 2005, Pages 44-52

  Blaszczyk Lezak, Iwona ^a   Wrobel, Aleksander M ^a   Kivitorma, Mika P M ^b   Vayrynen, I Juhani ^b  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b UNIVERSITY OF TURKU   (Finland)

Author keywords

(Dimethylamino)dimethylsilane precursor; Film properties; Film structure; Remote hydrogen plasma CVD; Silicon carbonitride film

Indexed keywords

CHARACTERIZATION; COMPOSITION; ELECTRIC RESISTANCE; FILM GROWTH; FRICTION; HYDROGEN; MOLECULAR STRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILICON CARBIDE; SILICON NITRIDE; STRUCTURE (COMPOSITION); TRIBOLOGY;

(DIMETHYLAMINO)DIMETHYLSILANE PRECURSORS; FILM PROPERTIES; FILM STRUCTURES; REMOTE HYDROGEN PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD);

THIN FILMS;

EID: 13844299551     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200406316     Document Type: Article

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