Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 1. Growth mechanism, structure, and surface morphology of silicon carbonitride films

Thin Solid Films

Volumn 497, Issue 1-2, 2006, Pages 24-34

  Blaszczyk Lezak, I ^a   Wrobel, A M ^a   Aoki, T ^b   Nakanishi, Y ^b   Kucinska, I ^c   Tracz, A ^c  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b SHIZUOKA UNIVERSITY   (Japan)

^c NONE

Author keywords

Film structure; Remote plasma CVD; Silicon carbonitride film; Tetramethyldisilazane precursor

Indexed keywords

CARBON NITRIDE; FILM GROWTH; MICROWAVES; NITROGEN; SILICON; SURFACE ROUGHNESS; THIN FILMS;

FILM STRUCTURE; REMOTE PLASMA CVD; SILICON CARBONITRIDE FILM; TETRAMETHYLDISILAZANE PRECURSOR;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 30344431501     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.192     Document Type: Article

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