Influence of silane partial pressure on the properties of amorphous SiCN films prepared by ECR-CVD

Thin Solid Films

Volumn 377-378, Issue , 2000, Pages 607-610

  Zhang, D H ^a   Gao, Y ^a   Wei, J ^b   Mo, Z Q ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c Singapore Productivity and Std Bd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; LIGHT EMISSION; PRESSURE EFFECTS; SILANES; SILICON COMPOUNDS; SURFACE ROUGHNESS;

SILICON CARBON NITROGEN;

AMORPHOUS FILMS;

EID: 17344379273     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01277-3     Document Type: Article

References (13)

1. Besling W.F.A., van der Put P.J.J.M., Schoonman J. J. Phys. Chem. Ref. Data. C5:1995;953.
2. Gertenberg K.W. Colloid Polym. Sci. 268:1990;345.
3. Novikov N.V., Voronkin M.A., Zaika N.I. Diam. Relat. Mater. 1:1992;580.
4. Wei J., Gao Y., Zhang D.H., Hing P., Mo Z.Q. J. Surf. Eng. 16:2000;225.
5. Kamata K., Maeda Y., Moriyama M. J. Mater. Sci. Lett. 5:1986;1051.
6. Zhang W., Wang J.T. Surf. Coat. Technol. 50:1991;1.
7. Kitho H., Muroyama M. Jpn. J. Appl. Phys. 33:1994;7076.
8. Lee A.L., Ong H., Xiong F., Chang R.P.H. Mater. Res. Soc. Symp Proc. 356:1995;161.
9. Gomez F.J., Prieto P., Elizalde E., Piqueras J. Appl. Phys. Lett. 69:1996;773.
10. Chen L.C., Chen C.K., Wei S.L., Bhusari D.M., Chen K.H., Chen Y.C., Jong Y.C., Huang Y.S. Appl. Phys. Lett. 72:1998;2463.
11. Marton D., Boyd K.J., Al -Bayati A.H., Todorov S.S., Rablais J.W. Phys. Rev. Lett. 73:1994;118.
12. Zhang D.H., Haneman D., Shi Z.R. Appl. Phys. Lett. 66:1989;4958.
13. Wagner I., Stasiewski H., Abeles B., Lanford W.A. Phys. Rev. B28:1983;7080.