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Volumn 398-399, Issue , 2001, Pages 413-418
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Structures and properties of the SiNC films on Si wafer at different deposition stages
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Author keywords
Deposition mechanism; MPCVD; Nano indentation; Silicon carbon nitride
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Indexed keywords
CATHODOLUMINESCENCE;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL STRUCTURE;
NANOSTRUCTURED MATERIALS;
SILICON COMPOUNDS;
SILICON WAFERS;
MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (MPCVD);
THIN FILMS;
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EID: 0035507010
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(01)01350-5 Document Type: Conference Paper |
Times cited : (14)
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References (19)
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