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Volumn 398-399, Issue , 2001, Pages 413-418

Structures and properties of the SiNC films on Si wafer at different deposition stages

Author keywords

Deposition mechanism; MPCVD; Nano indentation; Silicon carbon nitride

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; NANOSTRUCTURED MATERIALS; SILICON COMPOUNDS; SILICON WAFERS;

EID: 0035507010     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01350-5     Document Type: Conference Paper
Times cited : (14)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.