The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors

Journal of Applied Physics

Volumn 100, Issue 12, 2006, Pages

  Volkos, S N ^a   Efthymiou, E S ^a   Bernardini, S ^a   Hawkins, I D ^a   Peaker, A R ^a   Petkos, G ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; STABILITY;

BOND DEFECTS; CARRIER GENERATION; METAL-OXYNITRIDE-SILICON CAPACITORS; NEGATIVE BIAS VOLTAGE; SILICON-OXYNITRIDE INTERFACE;

MOS CAPACITORS;

EID: 33846109202     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402346     Document Type: Article

References (43)

1. Y. Miura and Y. Matukura, Jpn. J. Appl. Phys. 5, 180 (1966).
2. International Technology Roadmap for Semiconductors (ITRS), 2005 ed. (http://public.itrs.net).
3. L. Peters, Semicond. Int. 27, 47 (2004).
4. For a review on NBTI issues, refer to D. K. Schroder and J. A. Babcock, J. Appl. Phys. 0021-8979 10.1063/1.1567461 94, 1 (2003); S. Mahapatra, M. A. Alam, P. B. Kumar, T. R. Dalei, D. Varghese, and D. Saha, Microelectron. Eng. 0167-9317 80, 114 (2005); V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 0026-2714 46, 1 (2006); J. H. Stathis and S. Zafar, Microelectron. Reliab. 46, 270 (2006).
5. For a review on NBTI issues, refer to D. K. Schroder and J. A. Babcock, J. Appl. Phys. 0021-8979 10.1063/1.1567461 94, 1 (2003); S. Mahapatra, M. A. Alam, P. B. Kumar, T. R. Dalei, D. Varghese, and D. Saha, Microelectron. Eng. 0167-9317 80, 114 (2005); V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 0026-2714 46, 1 (2006); J. H. Stathis and S. Zafar, Microelectron. Reliab. 46, 270 (2006).
6. For a review on NBTI issues, refer to D. K. Schroder and J. A. Babcock, J. Appl. Phys. 0021-8979 10.1063/1.1567461 94, 1 (2003); S. Mahapatra, M. A. Alam, P. B. Kumar, T. R. Dalei, D. Varghese, and D. Saha, Microelectron. Eng. 0167-9317 80, 114 (2005); V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 0026-2714 46, 1 (2006); J. H. Stathis and S. Zafar, Microelectron. Reliab. 46, 270 (2006).
7. For a review on NBTI issues, refer to D. K. Schroder and J. A. Babcock, J. Appl. Phys. 0021-8979 10.1063/1.1567461 94, 1 (2003); S. Mahapatra, M. A. Alam, P. B. Kumar, T. R. Dalei, D. Varghese, and D. Saha, Microelectron. Eng. 0167-9317 80, 114 (2005); V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. 0026-2714 46, 1 (2006); J. H. Stathis and S. Zafar, Microelectron. Reliab. 46, 270 (2006).
8. For a review on defect physics related to the Si-Si O2 system, refer to E. H. Poindexter and P. J. Caplan, Prog. Surf. Sci. 0079-6816 10.1016/0079-6816(83)90006-0 14, 201 (1983); E. H. Poindexter, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/4/12/001 4, 961 (1989); P. M. Lenahan and J. F. Conley, Jr., J. Vac. Sci. Technol. B 16, 2134 (1998).
9. For a review on defect physics related to the Si-Si O2 system, refer to E. H. Poindexter and P. J. Caplan, Prog. Surf. Sci. 0079-6816 10.1016/0079-6816(83)90006-0 14, 201 (1983); E. H. Poindexter, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/4/12/001 4, 961 (1989); P. M. Lenahan and J. F. Conley, Jr., J. Vac. Sci. Technol. B 16, 2134 (1998).
10. For a review on defect physics related to the Si-Si O2 system, refer to E. H. Poindexter and P. J. Caplan, Prog. Surf. Sci. 0079-6816 10.1016/0079-6816(83)90006-0 14, 201 (1983); E. H. Poindexter, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/4/12/001 4, 961 (1989); P. M. Lenahan and J. F. Conley, Jr., J. Vac. Sci. Technol. B 16, 2134 (1998).
11. K. O. Jeppson and C. M. Svensson, J. Appl. Phys. 48, 2004 (1977).
12. L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 52, 2265 (2005).
13. E. P. Gusev, H. C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, IBM J. Res. Dev. 43, 265 (1999).
14. For a review on NBTI issues concerning nitridedoxynitrided dielectrics, refer to S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Microelectron. Reliab. 45, 19 (2005); four citations in Ref..
15. S. S. Tan, T. P. Chen, C. H. Ang, Y. L. Tan, and L. Chan, Jpn. J. Appl. Phys., Part 2 41, L1031 (2002).
16. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, IEEE Electron Device Lett. 25, 504 (2004).
17. S. Zafar, B. H. Lee, and J. Stathis, IEEE Electron Device Lett. 25, 153 (2004).
18. X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D'Emic, Appl. Phys. Lett. 84, 4394 (2004).
19. M. Houssa, G. Pourtois, M. M. Heyns, and A. Stesmans, J. Phys.: Condens. Matter 17, S2075 (2005).
20. A. Demesmaeker, A. Pergoot, and P. De Pauw, Microelectron. Reliab. 37, 1767 (1997).
21. S. Gamerith and M. Pölzl, Microelectron. Reliab. 42, 1439 (2002).
22. J. S. Kang and D. K. Schroder, Phys. Status Solidi A 89, 13 (1985).
23. N. O. Pearce, B. Hamilton, A. R. Peaker, and R. A. Craven, J. Appl. Phys. 62, 576 (1987).
24. D. Vuillaume, M. Lannoo, J. C. Bourgoin, and E. Rosencher, J. Appl. Phys. 66, 5920 (1989).
25. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
26. K. Yamasaki, M. Yoshida, and T. Sugano, Jpn. J. Appl. Phys. 18, 113 (1979).
27. S. Tsujikawa and J. Yugami, Microelectron. Reliab. 45, 65 (2005).
28. P. V. Gray and D. M. Brown, Appl. Phys. Lett. 8, 31 (1966).
29. S. J. Pearton and J. Lopata, Appl. Phys. Lett. 59, 2841 (1991).
30. C. H. Seager and R. A. Anderson, Solid State Commun. 76, 285 (1990).
31. J. L. Autran, F. Seigneur, C. Plossu, and B. Balland, J. Appl. Phys. 74, 3932 (1993).
32. J. H. Stathis, R. Bolam, M. Yang, T. B. Hook, A. Chou, and G. Larosa, Microelectron. Eng. 80, 126 (2005).
33. S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 48, 2086 (2001).
34. L. P. Trombetta, G. L. Gerardi, D. J. DiMaria, and E. Tierney, J. Appl. Phys. 64, 2434 (1988).
35. E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993).
36. A. Stesmans and G. Van Gorp, Phys. Rev. B 39, 2864 (1989).
37. Y. Miura and S. Fujieda, J. Appl. Phys. 95, 4096 (2004).
38. S. Fujieda, Y. Miura, M. Saitoh, E. Hasegawa, S. Koyama, and K. Ando, Appl. Phys. Lett. 82, 3677 (2003).
39. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Appl. Phys. Lett. 87, 204106 (2005).
40. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, IEEE Int. Reliab. Phys. Symp. Proc. 273 (2004).
41. J. Ushio, T. Maruizumi, and K. K. Abdelghafar, Appl. Phys. Lett. 81, 1818 (2002).
42. C. Z. Zhao, J. F. Zhang, G. Groeseneken, R. Degraeve, J. N. Ellis, and C. D. Beech, J. Appl. Phys. 90, 328 (2001).
43. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, and J. Babcock, Appl. Phys. Lett. 83, 1647 (2003).