Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Busani, T ^a   Devine, R A B ^a   Hughes, H L ^b  

^a NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL TRANSCONDUCTANCE; FOWLER NORDHEIM INJECTION; INJECTION MEASUREMENTS; NEGATIVE BIAS TEMPERATURE;

ERROR ANALYSIS; FIELD EFFECT TRANSISTORS; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ELECTRIC INSULATORS;

EID: 34247330202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2728746     Document Type: Article

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