SCOPUS 정보 검색 플랫폼

Proceedings - Electrochemical Society

Volumn PV 2005-01, Issue , 2005, Pages 267-278

Hydrogen model for negative bias temperature instabilities in MOS gate dielectrics

(5) Fleetwood, D M a,b Zhou, X J a Tsetseris, L b Pantelides, S T b,c Schrimpf, R D a

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HYDROGEN; INTERFACES (MATERIALS); MOS DEVICES; TRANSISTORS;

NEGATIVE-BIAS TEMPERATURE; TRANSISTOR THRESHOLD VOLTAGES;

DIELECTRIC MATERIALS;

EID: 31844448916 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (9)

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