Hydrogenation/deuteration of the Si-SiO 2 interface: Atomic-scale mechanisms and limitations

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Tsetseris, L ^a   Pantelides, S T ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-SCALE MECHANISMS; DEUTERATION; VICINITY; WAVE FUNCTIONS;

ACTIVATION ENERGY; CHEMICAL BONDS; HYDROGENATION; INTERFACES (MATERIALS); PASSIVATION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; TEMPERATURE MEASUREMENT;

SILICON;

EID: 17944376112     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1883710     Document Type: Article

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