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Physical Review B
Volumn 46, Issue 23, 1992, Pages 15554-15557
Diffusion of negatively charged hydrogen in silicon
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0000759318     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.46.15554     Document Type: Article
Times cited : (53)
References (13)
  • 1
    • 84926601346 scopus 로고    scopus 로고
    • For a collection of recent reviews and additional references, see Semiconductors and Semimetals, edited by J. I. Pankove and N. M. Johnson (Academic, San Diego, 1991), Vol. 34.
  • 3
    • 84926600120 scopus 로고    scopus 로고
    • The failure of Δ C to drop completely to zero after the flooding pulse could be due to the inability of the flooding electrons to penetrate beyond the zero-bias depletion depth and to the slight drift of H+ toward the surface during the hole pulse.
  • 10
    • 84926550859 scopus 로고    scopus 로고
    • Seager and co-workers (Refs. 8 and 9) actually measured an average mobility of hydrogen in a high-field region, where after introduction as H+ the hydrogen was assumed to spend a fraction f of its time as H+, and (1-f) as H0. They adopted a value of f approx 0.1 from a fit of model calculations to low-field data, so their reported D+ represents a directly measured quantity divided by the model-dependent and less certain value of f.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.