-
1
-
-
0025694654
-
An accurate model for power DMOSFETs including interelectrode capacitances
-
R. S. Scott and G. A. Franz, "An accurate model for power DMOSFETs including interelectrode capacitances," in Proc. IEEE Power Electron. Spec. Conf., 1990, pp. 113-119.
-
(1990)
Proc. IEEE Power Electron. Spec. Conf
, pp. 113-119
-
-
Scott, R.S.1
Franz, G.A.2
-
2
-
-
0026190965
-
A circuit simulation model for high-frequency power MOSFET's
-
Jul
-
K. Shenai, "A circuit simulation model for high-frequency power MOSFET's," IEEE Trans. Power Electron., vol. 6, no. 4, pp. 539-547, Jul. 1991.
-
(1991)
IEEE Trans. Power Electron
, vol.6
, Issue.4
, pp. 539-547
-
-
Shenai, K.1
-
3
-
-
0028013824
-
Modeling the gate more accurately for power MOSFETS
-
Jan
-
R. A. Wunderlich and P. K. Ghosh, "Modeling the gate more accurately for power MOSFETS," IEEE Trans. Power Electron., vol. 9, no. 1, pp. 105-111, Jan. 1994.
-
(1994)
IEEE Trans. Power Electron
, vol.9
, Issue.1
, pp. 105-111
-
-
Wunderlich, R.A.1
Ghosh, P.K.2
-
4
-
-
0028386555
-
MOSFET modeling for analog circuit CAD: Problems and prospects
-
Mar
-
Y. P. Tsividis and K. Suyama, "MOSFET modeling for analog circuit CAD: Problems and prospects," IEEE J. Solid-State Circuits, vol. 29, no. 3, pp. 210-216, Mar. 1994.
-
(1994)
IEEE J. Solid-State Circuits
, vol.29
, Issue.3
, pp. 210-216
-
-
Tsividis, Y.P.1
Suyama, K.2
-
5
-
-
0005391442
-
The lumped-charge power MOSFET model, including parameter extraction
-
May
-
I. Budihardjo and P. O. Lauritzen, "The lumped-charge power MOSFET model, including parameter extraction," IEEE Trans. Power Electron. vol. 10, no. 3, pp. 379-387, May 1995.
-
(1995)
IEEE Trans. Power Electron
, vol.10
, Issue.3
, pp. 379-387
-
-
Budihardjo, I.1
Lauritzen, P.O.2
-
6
-
-
0036564314
-
Modeling of the CoolMOS™ transistor - Part II: DC model and parameter extraction
-
May
-
B. J. Daniel, C. D. Parikh, and M. B. Patil, "Modeling of the CoolMOS™ transistor - Part II: DC model and parameter extraction," IEEE Trans. Electron Devices, vol. 49, no. 5, pp. 923-929, May 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.5
, pp. 923-929
-
-
Daniel, B.J.1
Parikh, C.D.2
Patil, M.B.3
-
7
-
-
0036442843
-
Power MOSFET switching waveforms: An empirical model based on a physical analysis of charge locations
-
L. Aubard, G. Verneau, J. C. Crebier, C. Schaeffer, and Y. Avenas, "Power MOSFET switching waveforms: An empirical model based on a physical analysis of charge locations," in Proc. IEEE Power Electron. Spec. Conf., 2002, pp. 1305-1310.
-
(2002)
Proc. IEEE Power Electron. Spec. Conf
, pp. 1305-1310
-
-
Aubard, L.1
Verneau, G.2
Crebier, J.C.3
Schaeffer, C.4
Avenas, Y.5
-
8
-
-
18344418331
-
Multicell circuit model for high-power thyristor-type semiconductor devices
-
Nov./Dec
-
S. Schröder, D. Detjen, and R. W. A. A. De Doncker, "Multicell circuit model for high-power thyristor-type semiconductor devices," IEEE Trans. Ind. Appl., vol. 39, no. 6, pp. 1641-1647, Nov./Dec. 2003.
-
(2003)
IEEE Trans. Ind. Appl
, vol.39
, Issue.6
, pp. 1641-1647
-
-
Schröder, S.1
Detjen, D.2
De Doncker, R.W.A.A.3
-
9
-
-
0345382618
-
Physically based models of high power semiconductors including transient thermal behavior
-
Jan
-
S. Schröder and R. W. De Doncker, "Physically based models of high power semiconductors including transient thermal behavior," IEEE Trans. Ind. Appl., vol. 18, no. 1, pp. 231-235, Jan. 2003.
-
(2003)
IEEE Trans. Ind. Appl
, vol.18
, Issue.1
, pp. 231-235
-
-
Schröder, S.1
De Doncker, R.W.2
-
10
-
-
0032071510
-
Status and trend of power semiconductor device models for circuit simulation
-
May
-
R. Kraus and H. J. Mattausch, "Status and trend of power semiconductor device models for circuit simulation," IEEE Trans. Power Electron. vol. 13, no. 3, pp. 452-465, May 1998.
-
(1998)
IEEE Trans. Power Electron
, vol.13
, Issue.3
, pp. 452-465
-
-
Kraus, R.1
Mattausch, H.J.2
-
11
-
-
0030835093
-
Performance requirements of power MOSFET models
-
Jan
-
I. K. Budihardjo, P. O. Lauritzen, and H. A. Mantooth, "Performance requirements of power MOSFET models," IEEE Trans. Power Electron. vol. 12, no. 1, pp. 36-45, Jan. 1997.
-
(1997)
IEEE Trans. Power Electron
, vol.12
, Issue.1
, pp. 36-45
-
-
Budihardjo, I.K.1
Lauritzen, P.O.2
Mantooth, H.A.3
-
12
-
-
0005391442
-
The lumped-charge power MOSFET model, including parameter extraction
-
May
-
I. Budihardjo and P. O. Lauritzen, "The lumped-charge power MOSFET model, including parameter extraction," IEEE Trans. Power Electron. vol. 10, no. 3, pp. 379-387, May 1995.
-
(1995)
IEEE Trans. Power Electron
, vol.10
, Issue.3
, pp. 379-387
-
-
Budihardjo, I.1
Lauritzen, P.O.2
-
13
-
-
0026231872
-
A mathematical model for power MOSFET capacitances
-
C. K. Ong, P. O. Lauritzen, and I. Budihardjo, "A mathematical model for power MOSFET capacitances," in Proc. IEEE Power Electron. Spec. Conf., 1991, pp. 421-429.
-
(1991)
Proc. IEEE Power Electron. Spec. Conf
, pp. 421-429
-
-
Ong, C.K.1
Lauritzen, P.O.2
Budihardjo, I.3
-
14
-
-
0034313571
-
Charge-control modeling of power bipolar junction transistors
-
Nov
-
R. Vijayalakshmi, M. Trivedi, and K. Shenai, "Charge-control modeling of power bipolar junction transistors," IEEE Trans. Power Electron. vol. 15, no. 6, pp. 1072-1080, Nov. 2000.
-
(2000)
IEEE Trans. Power Electron
, vol.15
, Issue.6
, pp. 1072-1080
-
-
Vijayalakshmi, R.1
Trivedi, M.2
Shenai, K.3
-
15
-
-
10944254997
-
Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor
-
S. Musumeci, R. Pagano, A. Raciti, C. Porto, C. Ronsisvalle, and R. Scollo, "Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor," in Proc. IEEE Ind. Appl. Conf., 2004, pp. 1924-1931.
-
(2004)
Proc. IEEE Ind. Appl. Conf
, pp. 1924-1931
-
-
Musumeci, S.1
Pagano, R.2
Raciti, A.3
Porto, C.4
Ronsisvalle, C.5
Scollo, R.6
-
16
-
-
33646045354
-
Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor
-
May
-
R. Pagano, "Characterization, parameter identification and modeling of a new monolithic emitter-switching bipolar transistor," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 1235-1244, May 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.3
, pp. 1235-1244
-
-
Pagano, R.1
-
17
-
-
3843149412
-
Physical CAD model for high-voltage IGBTS based on lumped-charge approach
-
Jul
-
F. Iannuzzo and G. Buratto, "Physical CAD model for high-voltage IGBTS based on lumped-charge approach," IEEE Trans. Power Electron., vol. 19, no. 4, pp. 885-893, Jul. 2004.
-
(2004)
IEEE Trans. Power Electron
, vol.19
, Issue.4
, pp. 885-893
-
-
Iannuzzo, F.1
Buratto, G.2
-
18
-
-
0037233176
-
Parameter extraction for a physics-based circuit simulator IGBT model
-
X. Kang, E. Santi, J. L. Hudgins, P. R. Palmer, and J. F. Donlon, "Parameter extraction for a physics-based circuit simulator IGBT model," in Proc. Appl. Power Electron. Conf., 2003, pp. 946-952.
-
(2003)
Proc. Appl. Power Electron. Conf
, pp. 946-952
-
-
Kang, X.1
Santi, E.2
Hudgins, J.L.3
Palmer, P.R.4
Donlon, J.F.5
-
19
-
-
0034313563
-
A review of IGBT models
-
Nov
-
K. Sheng, B. W. Williams, and S. J. Finney, "A review of IGBT models," IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1250-1266, Nov. 2000.
-
(2000)
IEEE Trans. Power Electron
, vol.15
, Issue.6
, pp. 1250-1266
-
-
Sheng, K.1
Williams, B.W.2
Finney, S.J.3
-
20
-
-
0033154004
-
A comparison of IGBT models for use in circuit design
-
Jul
-
A. N. Ghitiari, B. M. Gordon, R. A. McMahon, Z. M. Li, and P. A. Mawby, "A comparison of IGBT models for use in circuit design," IEEE Trans. Power Electron., vol. 14, no. 4, pp. 607-614, Jul. 1999.
-
(1999)
IEEE Trans. Power Electron
, vol.14
, Issue.4
, pp. 607-614
-
-
Ghitiari, A.N.1
Gordon, B.M.2
McMahon, R.A.3
Li, Z.M.4
Mawby, P.A.5
-
21
-
-
0032162558
-
A compact model for multiterminal bipolar devices used in smart power applications
-
Sep
-
N. Speciale, A. Leone, V. Graziano, and G. Privitera, "A compact model for multiterminal bipolar devices used in smart power applications," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 2037-2046, Sep. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.9
, pp. 2037-2046
-
-
Speciale, N.1
Leone, A.2
Graziano, V.3
Privitera, G.4
-
22
-
-
8744266270
-
Gummel-Poon model for 1.8 kV SiC high-voltage bipolar junction transistor
-
S. Balachandran, T. P. Chow, A. Agarwal, W. Tipton, and S. Scozzie, "Gummel-Poon model for 1.8 kV SiC high-voltage bipolar junction transistor," in Proc. IEEE Power Electron. Spec. Conf., 2004, pp. 2994-2998.
-
(2004)
Proc. IEEE Power Electron. Spec. Conf
, pp. 2994-2998
-
-
Balachandran, S.1
Chow, T.P.2
Agarwal, A.3
Tipton, W.4
Scozzie, S.5
-
23
-
-
1842527611
-
A resonant MOSFET gate driver with efficient energy recovery
-
Mar
-
Y. Chen, F. C. Lee, L. Amoroso, and H.-P. Wu, "A resonant MOSFET gate driver with efficient energy recovery," IEEE Trans. Power Electron. vol. 19, no. 2, pp. 470-477, Mar. 2004.
-
(2004)
IEEE Trans. Power Electron
, vol.19
, Issue.2
, pp. 470-477
-
-
Chen, Y.1
Lee, F.C.2
Amoroso, L.3
Wu, H.-P.4
-
24
-
-
20444427892
-
Active gate control of series connected IGBTS using positive current feedback technique
-
May
-
D. V. M. M. Krishna and V. Agarwal, "Active gate control of series connected IGBTS using positive current feedback technique," IEEE Trans. Circuits Syst. II, vol. 52, no. 5, pp. 261-265, May 2005.
-
(2005)
IEEE Trans. Circuits Syst. II
, vol.52
, Issue.5
, pp. 261-265
-
-
Krishna, D.V.M.M.1
Agarwal, V.2
-
25
-
-
33947138215
-
A new gate driver integrated circuit for IGBT devices with advanced protections
-
Jan
-
L. Dulau, S. Pontarollo, A. Boimond, J.-F. Garnier, N. Giraudo, and O. Terrasse, "A new gate driver integrated circuit for IGBT devices with advanced protections," IEEE Trans. Power Electron., vol. 21, no. 1, pp. 38-44, Jan. 2006.
-
(2006)
IEEE Trans. Power Electron
, vol.21
, Issue.1
, pp. 38-44
-
-
Dulau, L.1
Pontarollo, S.2
Boimond, A.3
Garnier, J.-F.4
Giraudo, N.5
Terrasse, O.6
-
26
-
-
0038200672
-
Resonant pole inverter to drive the data electrodes of ac plasma display panel
-
Jun
-
J.-M. Lee, C.-L. Chen, and S. T. Lo, "Resonant pole inverter to drive the data electrodes of ac plasma display panel," IEEE Trans. Ind. Electron., vol. 50, no. 3, pp. 554-559, Jun. 2003.
-
(2003)
IEEE Trans. Ind. Electron
, vol.50
, Issue.3
, pp. 554-559
-
-
Lee, J.-M.1
Chen, C.-L.2
Lo, S.T.3
-
27
-
-
0036754723
-
Gate-drive circuit for zero-voltage-switching half- and full-bridge converters
-
Sep./Oct
-
D. M. Van de Sype, A. P. M. Van den Bossche, J. Maes, and J. A. Melkebeek, "Gate-drive circuit for zero-voltage-switching half- and full-bridge converters," IEEE Trans. Ind. Appl., vol. 38, no. 5, pp. 1380-1388, Sep./Oct. 2002.
-
(2002)
IEEE Trans. Ind. Appl
, vol.38
, Issue.5
, pp. 1380-1388
-
-
Van de Sype, D.M.1
Van den Bossche, A.P.M.2
Maes, J.3
Melkebeek, J.A.4
-
28
-
-
0035365661
-
Control of the switching transients of IGBT series strings by high-performance drive units
-
Jun
-
A. Raciti, G. Belvedere, A. Galluzzo, G. Greco, M. Melito, and S. Musumeci, "Control of the switching transients of IGBT series strings by high-performance drive units," IEEE Trans. Ind. Electron., vol. 48, no. 3, pp. 482-490, Jun. 2001.
-
(2001)
IEEE Trans. Ind. Electron
, vol.48
, Issue.3
, pp. 482-490
-
-
Raciti, A.1
Belvedere, G.2
Galluzzo, A.3
Greco, G.4
Melito, M.5
Musumeci, S.6
-
29
-
-
19144367778
-
Fully integrated gate drive supply around power switches
-
May
-
R. Mitova, J.-C. Crebier, L. Aubard, and C. Schaeffer, "Fully integrated gate drive supply around power switches," IEEE Trans. Power Electron., vol. 20, no. 3, pp. 650-659, May 2005.
-
(2005)
IEEE Trans. Power Electron
, vol.20
, Issue.3
, pp. 650-659
-
-
Mitova, R.1
Crebier, J.-C.2
Aubard, L.3
Schaeffer, C.4
-
30
-
-
0025517001
-
Gate-resistance-limited switching frequencies of power MOSFET's
-
Nov
-
K. Shenai, "Gate-resistance-limited switching frequencies of power MOSFET's," IEEE Electron Device Lett., vol. 11, no. 11, pp. 544-546, Nov. 1990.
-
(1990)
IEEE Electron Device Lett
, vol.11
, Issue.11
, pp. 544-546
-
-
Shenai, K.1
-
31
-
-
2942633377
-
Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability
-
Jun
-
V. Khemka, V. Parthasarathy, R. Zhu, A. Bose, and T. Roggenbauer, "Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability," IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 1025-1032, Jun. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.6
, pp. 1025-1032
-
-
Khemka, V.1
Parthasarathy, V.2
Zhu, R.3
Bose, A.4
Roggenbauer, T.5
-
32
-
-
0036610921
-
Experimental and theoretical analysis of energy capability of resurf LDMOSFETs and its correlation with static electrical safe operating area (SOA)
-
Jun
-
V. Khemka, V. Parthasarathy, R. Zhu, A. Bose, and T. Roggenbauer, "Experimental and theoretical analysis of energy capability of resurf LDMOSFETs and its correlation with static electrical safe operating area (SOA)," IEEE Trans. Electron Devices, vol. 49, no. 6, pp. 1049-1058, Jun. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.6
, pp. 1049-1058
-
-
Khemka, V.1
Parthasarathy, V.2
Zhu, R.3
Bose, A.4
Roggenbauer, T.5
-
33
-
-
0033701013
-
Thermal instability of low voltage power-MOSFET's
-
May
-
A. Consoli, F. Gennaro, A. Testa, G. Casentino, F. Frisina, R. Letor, and A. Magrí, "Thermal instability of low voltage power-MOSFET's," IEEE Trans. Power Electron., vol. 15, no. 3, pp. 575-581, May 2000.
-
(2000)
IEEE Trans. Power Electron
, vol.15
, Issue.3
, pp. 575-581
-
-
Consoli, A.1
Gennaro, F.2
Testa, A.3
Casentino, G.4
Frisina, F.5
Letor, R.6
Magrí, A.7
-
34
-
-
0025677104
-
Accurate characterization of gate resistance and high-frequency switching efficiency of a power MOSFET
-
K. Shenai, "Accurate characterization of gate resistance and high-frequency switching efficiency of a power MOSFET," in Proc. IEEE Power Electron. Spec. Conf., 1990, pp. 107-112.
-
(1990)
Proc. IEEE Power Electron. Spec. Conf
, pp. 107-112
-
-
Shenai, K.1
-
35
-
-
0035507070
-
Reverse bias instabilities in bipolar power transistors with cellular layout
-
Nov
-
G. Busatto, L. Fratelli, and G. Vitale, "Reverse bias instabilities in bipolar power transistors with cellular layout," IEEE Trans. Electron Devices, vol. 11, no. 11, pp. 2544-2550, Nov. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.11
, Issue.11
, pp. 2544-2550
-
-
Busatto, G.1
Fratelli, L.2
Vitale, G.3
-
36
-
-
0031646746
-
Transient temperature measurements and modeling of IGBT's under short circuit
-
Jan
-
A. Ammous, B. Allard, and H. Morel, "Transient temperature measurements and modeling of IGBT's under short circuit," IEEE Trans. Power Electron., vol. 13, no. 1, pp. 12-25, Jan. 1998.
-
(1998)
IEEE Trans. Power Electron
, vol.13
, Issue.1
, pp. 12-25
-
-
Ammous, A.1
Allard, B.2
Morel, H.3
-
38
-
-
27744486943
-
On the safe operating area of power Schottky diodes in avalanche conditions
-
A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, and L. Merlin, "On the safe operating area of power Schottky diodes in avalanche conditions," in Proc. IEEE Int. Symp. Power Semicon. Devices ICs, 2005, pp. 223-226.
-
(2005)
Proc. IEEE Int. Symp. Power Semicon. Devices ICs
, pp. 223-226
-
-
Irace, A.1
Breglio, G.2
Spirito, P.3
Bricconi, A.4
Raffo, D.5
Merlin, L.6
-
39
-
-
84906670509
-
Thermal instabilities in high current power MOS devices: Experimental evidence, electro-thermal simulations and analytical modeling
-
P. Spirito, G. Breglio, V. D'Alessandro, and N. Rinaldi, "Thermal instabilities in high current power MOS devices: Experimental evidence, electro-thermal simulations and analytical modeling," in Proc. Int. Conf. Microelectron., 2002, pp. 23-30.
-
(2002)
Proc. Int. Conf. Microelectron
, pp. 23-30
-
-
Spirito, P.1
Breglio, G.2
D'Alessandro, V.3
Rinaldi, N.4
-
41
-
-
0035444715
-
Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors
-
Sep
-
A. Litwin, "Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 2179-2181, Sep. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.9
, pp. 2179-2181
-
-
Litwin, A.1
-
42
-
-
0024646960
-
High-performance vertical-power DMOSFET's with selectively silicided gate and source regions
-
Apr
-
K. Shenai, P. A. Piacente, C. S. Korman, and B. J. Baliga, "High-performance vertical-power DMOSFET's with selectively silicided gate and source regions," IEEE Electron Devices Lett., vol. 10, no. 4, pp. 153-155, Apr. 1989.
-
(1989)
IEEE Electron Devices Lett
, vol.10
, Issue.4
, pp. 153-155
-
-
Shenai, K.1
Piacente, P.A.2
Korman, C.S.3
Baliga, B.J.4
-
43
-
-
0026170229
-
A cobalt salicide CMOS process with TiN-strapped polysilicon gates
-
Jun
-
J. R. Pfiester, T. C. Mele, Y. Limb, R. E. Jones, M. Woo, B. Boeck, and C. D. Gunderson, "A cobalt salicide CMOS process with TiN-strapped polysilicon gates," IEEE Electron Devices Lett., vol. 12, no. 6, pp. 350-352, Jun. 1991.
-
(1991)
IEEE Electron Devices Lett
, vol.12
, Issue.6
, pp. 350-352
-
-
Pfiester, J.R.1
Mele, T.C.2
Limb, Y.3
Jones, R.E.4
Woo, M.5
Boeck, B.6
Gunderson, C.D.7
-
44
-
-
0032166568
-
+) implantation into polysilicon gate on thermal stability of cobalt silicide formed on polysilicon gate
-
Sep
-
+) implantation into polysilicon gate on thermal stability of cobalt silicide formed on polysilicon gate," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1912-1919, Sep. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.45
, Issue.9
, pp. 1912-1919
-
-
Sun, W.-T.1
Liaw, M.-C.2
Hsieh, K.-C.3
Hsu, C.C.-H.4
|