Reverse bias instabilities in bipolar power transistors with cellular layout

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2544-2550

  Busatto, Giovanni ^a   Fratelli, Luigi ^b   Vitale, Gianfranco ^c  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^b ANSALDO ENERGIA   (Italy)

^c UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Bipolar; Drive circuits; Failure analysis; Impact ionization; IMPATT diodes; Nondestructive testing; Power bipolar transistors; Power semiconductor devices; Power transistors; Second breakdown; Semiconductor device modeling; Semiconductor device testing; Simulation; Transistors

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; IMPACT IONIZATION; IMPATT DIODES; INTEGRATED CIRCUIT LAYOUT; NONDESTRUCTIVE EXAMINATION; OSCILLATIONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING;

BIPOLAR POWER TRANSISTOR; CELLULAR LAYOUT; DRIVER CIRCUIT; REVERSE BIAS INSTABILITY;

BIPOLAR TRANSISTORS;

EID: 0035507070     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960380     Document Type: Article

References (20)

1. A new high current mode of transistor operation
2. Avalanche injection and second breakdown in transistors
3. Second breakdown in power transistors due to avalanche injection
4. Second breakdown prediction by two-dimensional numerical analysis of BJT turn-off
5. Influence of base drive on the RBSOA of power bipolar transistors
6. Experimental study of reverse bias failure mechanisms in bipolar mode JFET (BMFET)
7. Failure mechanisms and nondestructive testing of power bipolar and Mos gated transistors
8. A method for nondestructive testing of bipolar transistors, IGBTs and MOSFETs
9. Semiconductor measurement technology: A programmable reverse-bias safe operating area transistor tester
10. An experimental study of reverse-bias second breakdown
11. Analysis of stress in power bipolar devices during inductive turn-off
12. On the reverse bias safe operating area of power bipolar transistors during inductive turn-off
13. Advanced RBSOA analysis for advanced power BJTs
14. Experimental and theoretical studies of avalanche transistors
15. An analysis of the dynamic behavior of switching circuit using avalanche transistors
16. Microwave Si avalanche diode with nearly-abrupt-type junction
17. Transit-time oscillations during inductive turn-off of power BJT
18. A study on the IGBTs turn-off failure and inhomogeneous operation
19. Turn-off failure mechanisms in large (2.2kV, 20A) MCT devices