A comparison of IGBT models for use in circuit design

IEEE Transactions on Power Electronics

Volumn 14, Issue 4, 1999, Pages 607-614

  Githiari, Anthony N ^a,b   Gordon, Benjamin M ^a   McMahon, Richard A ^a   Li, Zhong Min ^a   Mawby, Philip A ^a,b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IEEE   (United Kingdom)

Author keywords

Device modeling; Device simulation; Hefner model; IGBT's; Kraus model; Parameter extraction

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MODELS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0033154004     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.774196     Document Type: Review

References (10)

1. A. Hefner and D. Blackburn, "An analytical model for the steady state and transient characteristics of the power insulated-gate bipolar transistor," Solid State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
2. R. Kraus and K. Hoffmann, "An analytical model of IGBT'swith low emitter efficiency," in ISPSD'93, Monterey CA, pp. 30-34.
3. R. Kraus, K. Hoffmann, and P. Türkes, "Analysis and modeling of the technology-dependent electrothermal IGBT characteristies," in Proc. IPEC'95, Yokohama, Japan, pp. 1128-1133.
4. SABER Circuit Simulation Software Manual, Analogy Inc., Beaverton, OR, 1991.
5. C. S. Mitter, A. R. Hefner, D. Y. Chen, and F. C. Lee, "Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE," IEEE Trans. Ind. Applicat., vol. 30, no. 1, pp. 24-33, 1993.
6. A. N. Githiari, B. M. Gordon, R. A. McMahon, Z. M. Li, and P. A. Mawby, "A comparison of IGBT models for use in circuit design," in IEEE Power Electronics Specialists Conf., St. Louis, MO, June 1997, vol. 2, pp. 1554-1560.
7. Z. M. Li, P. A. Mawby, M. S. Khanniche, and K. Board, "Validation and extension of IGBT compact model with parameter extraction," in IEE Colloquium, London, U.K., June 1996.
8. ICCAP User's Manual, Hewlett Packard, Santa Clara, CA, 1991.
9. R. J. Leedham and R. A. McMahon, "Design of a high speed power MOSFET driver and its use in a half bridge converter," in Proc. 5th European Conf. Power Electronics and Applications, 1993, vol. 2, pp. 407-412.
10. A. Githiari, "The design of semiconductor switches for high voltage applications," Ph.D. thesis, Cambridge Univ., Cambridge, U.K., 1996.