Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2179-2181

  Litwin, A ^a  

^a ERICSSON RESEARCH   (Sweden)

Author keywords

Contact resistance; MOSFETs; Semiconductor metal interfaces

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYSILICON; SCHOTTKY BARRIER DIODES;

CONTACT RESISTANCE; SILICIDE;

MOSFET DEVICES;

EID: 0035444715     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944214     Document Type: Article

References (10)

1. High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs
2. RF potential of a 0.18-μm CMOS logic technology
3. RF MOSFET modeling accounting for distributed substrate and channel resistance
4. A simple subcuircuit extension of the BSIM3v3 model for RF CMOS design
5. An effective gate resistance model for CMOS RF and noise modeling
6. Interfacial gate resistance in Schottky-barrier-gate field-effect transistors
7. 2: Impact on dopant diffusion and contact resistance
8. 2 for bipolar applications
9. Impact of distributed gate resistance on the performance of MOS devices