Performance requirements for power MOSFET models

IEEE Transactions on Power Electronics

Volumn 12, Issue 1, 1997, Pages 36-45

  Budihardjo, Irwan K ^b   Lauritzen, Peter O ^a,b   Mantooth, H Alan ^a,c  

^a IEEE

^b University of Washington   (United States)

^c Analogy Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRIC WAVEFORMS; MOSFET DEVICES; PERFORMANCE; POWER CONVERTERS; SEMICONDUCTOR DEVICE MODELS; WAVEFORM ANALYSIS;

DATA BOOK INFORMATION; WAVEFORM SIMULATION;

POWER ELECTRONICS;

EID: 0030835093     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.554167     Document Type: Article

References (11)

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2. C. H. Xu and D. Schroder, "Modeling and simulation of power MOSFET's and power diodes," in Proc. 1988 PESC Conf., pp. 76-83.
3. C.-E. Cordonnier, "SPICE model for TMOS," Motorola Application Note AN1043, 1989.
4. R. S. Scott and G. A. Franz, "An accurate model for power DMOSFET including interelectrode capacitance," in Proc. 1990 PESC Conf., pp. 113-119.
5. I. Budihardjo and P. O. Lauritzen, "The lumped-charge power MOSFET model, including parameter extraction," IEEE Trans. Power Electron., vol. 10, pp. 379-387, May 1995.
6. S. Malouyans, "SPICE computer models for HEXFET power MOSFETs," Int. Rectifier Application Notes AN-975A, 1991
7. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1987, pp. 123-130.
8. P. Antognetti and G. Massobrio, Semiconductor Device Modeling with SPICE. New York: McGraw-Hill, 1988.
9. B. J. Baliga, Modern Power Devices. New York: Wiley, 1987.
10. I. Budbihardjo, P. O. Lauritzen, and C. Xu, "Simulation of high frequency PWM and quasi-resonant converters using lumped-charge power MOSFET model," in Proc. 1994 APEC Conf.
11. NIST (Nat. Insti. Sci. Technol., USA), Working Group on Model Validation, Feb. 1994.