Gummel-Poon model for 1.8kV SiC high-voltage bipolar junction transistor

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 2994-2998

  Balachandran, S ^a   Chow, T P ^a   Agarwal, A ^b   Tipton, W ^c   Scozzie, S ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS (BJT); COLLECTOR RESISTANCE; GUMMEL-POON MODEL;

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SWITCHING;

BIPOLAR TRANSISTORS;

EID: 8744266270     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355311     Document Type: Conference Paper

References (11)

1. nd ed., McGraw-Hill, 1998.
2. T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, R. Singh, "Silicon Carbide PiN, Schottky, and Merged PiN-Schottky Power Diode Models Implemented in the Saber Circuit Simulator," Conf. Rec. of IEEE Power Electronics Specialists Conf (PESC), pp.2103-2108, Vancouver, Canada, June 2001.
3. T. McNutt, A. Hefner, A. Mantooth, J. Duliere, D. Berning, R. Singh, "Parameter Extraction Sequence for SiC Schottky, Merged PiN Schottky, and PiN Power diode Models," Conf. Rec. of IEEE Power Electronics Specialists Conf (PESC), pp. 1269-1276, Cairns, Australia, June 2002.
4. T. McNutt, A. Hefner, A. Mantooth, D. Berning, S. H. Ryu, "Silicon Carbide Power MOSFET MODEL and Parameter Extraction Sequence", IEEE Power Electronics Specialists Conference, 2003.
5. S.H. Ryu, A. Agarwal and J.W. Palmour, "1800V NPN Bipolar Junction Transistors in 4H-SiC," IEEE Electron Device Letters, vol. 22, pp.124-126, 2001.
6. Software from Synopsis®. Aurora™ is a complete semiconductor device characterization and parameter extraction system, providing capabilities to measure device characteristics, extract circuit-level model parameters from measured or simulated data, and analyze results graphically.
7. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, Chap. 7, Wiley, 1986.
8. th International Symposium on Power Semiconductor Devices (ISPSD), pp.234-237, 1992.
9. S. K. Ghandhi, Semiconductor Power Devices", John Wiley & Sons, Inc., 1977.
10. P. L. Hower, "Application of a charge-control model to high-voltage power transistors", IEEE Transactions on Electron Devices, v ED-23, n 8, Aug. 1976, p 863-70.
11. P. L. Hower, "A model for turn-off in bipolar transitions", International Electron Devices Meeting. Technical Digest, 1980, p 289-92.