Impact of nitrogen (N2+) implantation into polysilicon gate on thermal stability of cobalt suicide formed on polysilicon gate

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1912-1919

  Sun, Wein Town ^a,c   Liaw, Ming Chi ^a   Hsieh, Kuang Chien ^b   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Agglomeration; Boron penetration; Cobalt suicide; PMOSFET

Indexed keywords

AGGLOMERATION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; ION IMPLANTATION; MOSFET DEVICES; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; NITROGEN ION IMPLANTATION; POLYSILICON GATE; SHEET RESISTANCE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032166568     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711355     Document Type: Article

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