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Volumn 18, Issue 1 I, 2003, Pages 231-235
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Physically based models of high power semiconductors including transient thermal behavior
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Author keywords
Circuit simulation; GTO; High power semiconductor; IGCT; MTO; Physical model; PSpice; Thermal model
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Indexed keywords
C (PROGRAMMING LANGUAGE);
COMPUTER SIMULATION;
FINITE DIFFERENCE METHOD;
FINITE ELEMENT METHOD;
SEMICONDUCTOR DIODES;
THYRISTORS;
CIRCUIT SIMULATION;
HIGH POWER SEMICONDUCTORS;
THERMAL MODEL;
THERMAL VOLTAGE;
TRANSIENTS;
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EID: 0345382618
PISSN: 08858993
EISSN: None
Source Type: Journal
DOI: 10.1109/TPEL.2002.807147 Document Type: Article |
Times cited : (10)
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References (9)
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