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Volumn 18, Issue 1 I, 2003, Pages 231-235

Physically based models of high power semiconductors including transient thermal behavior

Author keywords

Circuit simulation; GTO; High power semiconductor; IGCT; MTO; Physical model; PSpice; Thermal model

Indexed keywords

C (PROGRAMMING LANGUAGE); COMPUTER SIMULATION; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; SEMICONDUCTOR DIODES; THYRISTORS;

EID: 0345382618     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2002.807147     Document Type: Article
Times cited : (10)

References (9)
  • 1
    • 0031233099 scopus 로고    scopus 로고
    • A unified diode model for circuit simulation
    • Sept.
    • H. A. Mantooth and J. L. Duliere, "A unified diode model for circuit simulation," IEEE Trans. Power Electron., vol. 12, pp. 816-823, Sept. 1997.
    • (1997) IEEE Trans. Power Electron. , vol.12 , pp. 816-823
    • Mantooth, H.A.1    Duliere, J.L.2
  • 2
    • 84946967272 scopus 로고    scopus 로고
    • A new and accurate circuit-modeling approach for the power-diode
    • T. Vogler and D. Schröder, "A new and accurate circuit-modeling approach for the power-diode," in Proc. IEEE PESC'92 Conf., 1992, pp. 870-876.
    • Proc. IEEE PESC'92 Conf., 1992 , pp. 870-876
    • Vogler, T.1    Schröder, D.2
  • 3
    • 0028728740 scopus 로고    scopus 로고
    • A systematic approach to modeling of power semiconductor devices based on charge control principles
    • C. L. Ma, P. O. Lauritzen, L. Pao-Yi, I. Budihardjo, and J. Sigg, "A systematic approach to modeling of power semiconductor devices based on charge control principles," in Proc. IEEE PESC'94 Conf., 1994, pp. 31-37.
    • Proc. IEEE PESC'94 Conf., 1994 , pp. 31-37
    • Ma, C.L.1    Lauritzen, P.O.2    Pao-Yi, L.3    Budihardjo, I.4    Sigg, J.5
  • 7
    • 0019608025 scopus 로고
    • Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level
    • J. M. Dorkel, Ph. Leturcq, "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level," Solid-State Electron., vol. 24, pp. 821-825, 1981.
    • (1981) Solid-State Electron. , vol.24 , pp. 821-825
    • Dorkel, J.M.1    Leturcq, Ph.2
  • 8
    • 0031335572 scopus 로고    scopus 로고
    • Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model
    • J. Sigg, P. Türkes, and R. Kraus, "Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model," in Proc. IEEE IAS'97 Conf., 1997.
    • Proc. IEEE IAS'97 Conf., 1997
    • Sigg, J.1    Türkes, P.2    Kraus, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.