Characterization, parameter identification, and modeling of a new monolithic emitter-switching bipolar transistor

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1235-1244

  Pagano, Rosario ^a,b  

^a UNIVERSITY OF CATANIA   (Italy)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Behavioral model; Emitter switching bipolar device; Series resistance; Storage time

Indexed keywords

COMPUTER SIMULATION; IDENTIFICATION (CONTROL SYSTEMS); MOSFET DEVICES; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

BEHAVIORAL MODEL; EMITTER SWITCHING BIPOLAR DEVICE; SERIES RESISTANCE; STORAGE TIME;

BIPOLAR TRANSISTORS;

EID: 33646045354     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.872694     Document Type: Article

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