Modeling of the CoolMOS™ transistor - Part II: DC model and parameter extraction

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 923-929

  Daniel, Bobby J ^b   Parikh, Chetan D ^a,b   Patil, Mahesh B ^a,b  

^a IEEE

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

CoolMOS model; CoolMOS parameter extraction; Power MOSFET model

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; JUNCTION GATE FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE MODELS;

DRAIN VOLTAGES; GATE VOLTAGES; PARAMETER EXTRACTION; POWER TRANSISTOR;

MOSFET DEVICES;

EID: 0036564314     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998604     Document Type: Article

References (13)

1. CoolMOS™ - A new milestone in high voltage power MOS
2. A new generation of high voltage MOSFETs breaks the limits of silicon
3. Theory of a novel voltage sustaining layer for power devices
4. Theory of semiconductor superjunction devices
5. Simulated superior performance of semiconductor superjunction devices
6. Analysis of the effect of charge imbalance on static and dynamic characteristics of the superjunction MOSFET
7. Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs
8. Modeling of the CoolMOS™ transistor - Part I: Device physics
9. Study of the quasisaturation effect in VDMOST transistors
10. An accurate model for power DMOSFETs, including inter-electrode capacitances
11. A SPICE 2 subcircuit representation for power MOSFETs using empirical methods
12. Modeling and simulation of power MOSFETs and power diodes