Control of the switching transients of IGBT series strings by high-performance drive units

IEEE Transactions on Industrial Electronics

Volumn 48, Issue 3, 2001, Pages 482-490

  Raciti, Angelo ^a,b   Belverde, Gaetano ^c   Galluzzo, Agostino ^a,c   Greco, Giuseppe ^c   Melito, Maurizio ^c   Musumeci, Salvatore ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Gate drives; Insulated gate bipolar transistor; MOSFETs; Series connection

Indexed keywords

SWITCHING TRANSIENTS;

MOSFET DEVICES; POWER CONVERTERS; POWER ELECTRONICS; SWITCHING CIRCUITS; THYRATRONS; TRANSIENTS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035365661     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/41.925575     Document Type: Article

References (14)

1. A multiple-switch high-voltage dc-dc converter
2. Study of direct series connection of IGBT for a 3 kV chopper
3. High reliability high voltage fast switches
4. Semiconductor power MOSFET's devices in series
5. Switching-behavior improvement of insulated gate-controlled devices
6. High performance active gate drive for high power IGBTs
7. Gate-control strategies for snubberless operation of series connected IGBTs
8. Series connection of IGBT's with active voltage balancing
9. The series connections of IGBT's investigated by experiments and simulation
10. The series connection of IGBT's with optimized voltage sharing in the switching transient
11. Snubberless balancement of series connected insulated gate devices by a novel gate control strategy
12. Active voltage sharing of series connected strings of IGBT devices in bridge applications
13. A discussion on IGBT short circuit behavior and fault protection schemes