Experimental and theoretical analysis of energy capability of RESURF LDMOSFETs and its correlation with static electrical safe operating area (SOA)

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1049-1058

  Khemka, Vishnu ^a,b   Parthasarathy, Vijay ^b   Zhu, Ronghua ^b   Bose, Amitava ^b   Roggenbauer, Todd ^b  

^a IEEE   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Breakdown voltage; Double RESURF; Electrical failure; Electrothermal; Electrothermal failure; Energy capability; Intrinsic temperature; LDMOS; RESURF; Safe operating area; Single RESURF; Smart power; SOA; Specific on resistance; Thermal failure

Indexed keywords

ELECTROTHERMAL FAILURE;

ELECTRIC BREAKDOWN; ENERGY DISSIPATION; FAILURE ANALYSIS; GREEN'S FUNCTION; INTEGRATED CIRCUITS; TEMPERATURE DISTRIBUTION;

FIELD EFFECT TRANSISTORS;

EID: 0036610921     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003740     Document Type: Article

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