Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 1025-1032

  Khemka, Vishnu ^a   Parthasarathy, Vijay ^a   Zhu, Ronghua ^a   Bose, Amitava ^a   Roggenbauer, Todd ^a  

^a MOTOROLA INC   (United States)

Author keywords

Breakdown voltage; Diode temperature sensor; Electrical failure; Electrothermal; Electrothermal failure; Energy capability; Intrinsic temperature; Lateral double diffused MOS (LDMOS); Power distribution; Reduced surface field (RESURF); Safe Operating Area (SOA); Smart power; Specific on resistance; Thermal failure

Indexed keywords

ELECTRIC BREAKDOWN; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

DIODE TEMPERATURE SENSOR; ELECTROTHERMAL FAILURE; SAFE OPERATING AREA;

SEMICONDUCTOR DEVICE TESTING;

EID: 2942633377     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.828278     Document Type: Article

References (10)

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