Parameter extraction for a physics-based circuit simulator IGBT model

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2, Issue , 2003, Pages 946-952

  Kang, X ^a   Santi, E ^a   Hudgins, J L ^a   Palmer, P R ^b   Donlon, J F ^c  

^a University of South Carolina   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c POWEREX INC   (United States)

Author keywords

IGBT; Model; Parameter extraction; Power semiconductor modeling

Indexed keywords

COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; ELECTRIC LOADS; SWITCHING THEORY;

PARAMETER EXTRACTION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0037233176     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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