Thermal instability of low voltage power-MOSFET's

IEEE Transactions on Power Electronics

Volumn 15, Issue 3, 2000, Pages 575-581

  Consoli, Alfio ^a,d   Gennaro, Francesco ^a,d   Testa, Antonio ^b,d   Consentino, Giuseppe ^c   Frisina, Ferruccio ^c   Letor, Romeo ^c   Magrì, Angelo ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

^c ST Macroelectronics   (Italy)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT DENSITY; ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT LAYOUT; MICROSCOPIC EXAMINATION; PARTIAL DIFFERENTIAL EQUATIONS; TEMPERATURE; THRESHOLD VOLTAGE;

AVERAGE TEMPERATURE; DRAIN CURRENT; FORWARD BIASED SAFE OPERATING AREA; THERMAL INSTABILITY;

MOSFET DEVICES;

EID: 0033701013     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.844518     Document Type: Article

References (5)

1. T. Syau, P. Venkatraman, and B. J. Baliga, "Comparison of ultralow specific on-resistance UMOSFET structures: The ACCUFET, EXFET, INVFET, and conventional UMOSFET's," IEEE Trans. Electron Devices, vol. 41, pp. 800-808, May 1994.
2. C. Hu and M. Chi, "Second breakdown of vertical power MOSFET's," IEEE Trans. Electron Devices, vol. ED-29, Aug. 1982.
3. D. A. Grant and J. Gowar, Power MOSFET's - Theory and Applications. New York: Wiley.
4. B. J. Baliga, Modern Power Devices. New York: Wiley.
5. K. J. Fisher and K. Shenai, "Effect of bipolar turn-on on the static current-voltage characteristics of scaled vertical power DMOSFET's," IEEE Trans. Electron Devices, vol. 42, Mar. 1995.