A new gate driver integrated circuit for IGBT devices with advanced protections

IEEE Transactions on Power Electronics

Volumn 21, Issue 1, 2006, Pages 38-43

  Dulau, Laurent ^a   Pontarollo, Serge ^a   Boimond, Anthony ^a   Garnier, Jean François ^a   Giraudo, Nicole ^a   Terrasse, Olivier ^a  

^a STMICROELECTRONICS   (France)

Author keywords

Active Miller clamp; Bipolar CMOS DMOS (BCD); Cross conduction; Insulated gate bipolar transistor (IGBT); Overshoot; Peak current; Two level driver

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DRIVES; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS;

ACTIVE MILLER CLAMP; BIPOLAR CMOS DMOS (BCD); MILLER CLAMP FUNCTION; OVERSHOOT; PEAK CURRENT; TWO-LEVEL DRIVERS;

CMOS INTEGRATED CIRCUITS;

EID: 33947138215     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2005.861115     Document Type: Article

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