Multicell circuit model for high-power thyristor-type semiconductor devices

IEEE Transactions on Industry Applications

Volumn 39, Issue 6, 2003, Pages 1641-1647

  Schröder, Stefan ^a   Detjen, Dirk ^a   De Doncker, Rik W A A ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Circuit simulation model; Current spreading; Gate turn off thyristor (GTO); High power semiconductor; Integrated gate commutated thyristor (IGCT)

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION; EQUIVALENT CIRCUITS; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS;

CIRCUIT SIMULATION MODEL; CURRENT SPREADING; GATE TURN-OFF THYRISTOR; HIGH POWER SEMICONDUCTOR; INTEGRATED GATE-COMMUTATED THYRISTOR;

THYRISTORS;

EID: 18344418331     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2003.818974     Document Type: Article

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