Comparative analysis of nanoscale MOS device architectures for RF applications

Semiconductor Science and Technology

Volumn 22, Issue 5, 2007, Pages 481-491

  Kranti, Abhinav ^a   Armstrong, G Alastair ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

DEVICE PARAMETERS; GATE CAPACITANCE; GATE MISALIGNMENT; PARASITIC CAPACITANCE;

MOS DEVICES;

EID: 34247473409     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/5/005     Document Type: Article

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