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Volumn 2006, Issue , 2006, Pages 8-11

Dependence of FinFET RF performance on fin width

Author keywords

Cut off frequency; FinFET; Metal gate; RF analysis; Small signal model

Indexed keywords

COMPUTATIONAL GEOMETRY; ELECTRIC RESISTANCE; IDENTIFICATION (CONTROL SYSTEMS); NATURAL FREQUENCIES; OPTIMIZATION;

EID: 33751214764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2005.1587887     Document Type: Conference Paper
Times cited : (55)

References (8)
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  • 2
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  • 3
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  • 4
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    • October
    • D. Lederer et al.,"FinFet analogue characterization from DC to 110 GHz", Sol. St. Electron., vol. 49, pp. 1488-1496, October 2005.
    • (2005) Sol. St. Electron , vol.49 , pp. 1488-1496
    • Lederer, D.1
  • 5
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    • Analysis of the parasitic source/drain resistance in multiple gate field effect transistors
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  • 8
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    • What are the limiting parameters of deep submicron MOSFETs for high frequency applications?
    • March
    • G. Dambrine et al., "What are the limiting parameters of deep submicron MOSFETs for high frequency applications?", IEEE Electron Dev. Lett., vol. 24, no. 3, pp. 189-191, March 2003.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.