90 nm SOI-CMOS of 150 GHz fmax and 0.8 dB NFmin @6 GHz for SOC

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 153-154

  Vanmackelberg, M ^a   Boret, S ^b   Gloria, D ^b   Rozeau, O ^c   Gwoziecki, R ^c   Raynaud, C ^c   Lepilliet, S ^a   Dambrine, Gilles ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POWER UTILIZATION; GATES (TRANSISTOR); METALLIZING; MICROWAVES; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

MICROWAVE NOISE PARAMETERS;

CMOS INTEGRATED CIRCUITS;

EID: 0036456385     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. A record high 150 GHz fmax realized at 0.18μm gate length in an industrial RF-CMOS technology, L.F. Tiemeijer et al., Philips Research Laboratories, Session 10, IEDM 2001.
2. 70 nm SOI-CMOS of 135 GHz fmax with Dual Offset-Implanted Source-Drain Extension Structure for RF/Analog and Logic Applications, T. Matsumoto et al., Mitsubishi Electric Corporation, Session 10, IEDM 2001.