A 185 GHz fmax SOI DTMOS with a new metallic overlay-gate for low-power RF applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 943-945

  Hirose, T ^a   Momiyama, Y ^a   Kosugi, M ^a   Kano, H ^a   Watanabe, Y ^a   Sugii, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMPLIFIERS (ELECTRONIC); COBALT COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; NATURAL FREQUENCIES; POLYSILICON; SCATTERING PARAMETERS; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; SUBSTRATES; WIRELESS TELECOMMUNICATION SYSTEMS;

DYNAMIC THRESHOLD MOS TRANSISTOR; METALLIC OVERLAY-GATE; MILLIMETER-WAVE AMPLIFIER; SILICON ON INSULATOR SUBSTRATE;

MOSFET DEVICES;

EID: 0035714863     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)