SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2340-2346

Analysis of static and dynamic performance of short-channel double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors for improved cutoff frequency

(3) Kranti, Abhinav a Chung, Tsung Ming a Raskin, Jean Pierre a

a UNIVERSITÉ CATHOLIQUE DE LOUVAIN (Belgium)

Author keywords

Current gain; Cutoff frequency; Double gate MOSFET; Drain current enhancement; Intrinsic gate capacitance; Single gate MOSFET; Transconductance; Volume inversion

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FREQUENCIES; GATES (TRANSISTOR); MOSFET DEVICES; SATURATION (MATERIALS COMPOSITION); TRANSCONDUCTANCE;

CURRENT GAIN; CUTOFF FREQUENCY; DOUBLE-GATE MOSFET; DRAIN CURRENT ENHANCEMENT; INTRINSIC GATE CAPACITANCE; SINGLE-GATE MOSFET; VOLUME INVERSION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 21244503871 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2340 Document Type: Conference Paper

Times cited : (34)

References (12)

1
- 0035416636
- S. Cristoloveanu: Solid-State Electron. 43 (2001) 1403.
- (2001) Solid-state Electron. , vol.43 , pp. 1403
- Cristoloveanu, S.¹

2
- 0023421993
- F. Balestra, S. Cristoloveanu, M. Benachir and T. Elewa: IEEE Electron Device Lett. 8 (1987) 410.
- (1987) IEEE Electron Device Lett. , vol.8 , pp. 410
- Balestra, F.¹ Cristoloveanu, S.² Benachir, M.³ Elewa, T.⁴

3
- 0035334721
- F. Allibert, T. Ernest, J. Pretet, N. Hefyene, C. Perret, A. Zaslavsky and S. Cristoloveanu: Solid-State Electron. 45 (2001) 559.
- (2001) Solid-state Electron. , vol.45 , pp. 559
- Allibert, F.¹ Ernest, T.² Pretet, J.³ Hefyene, N.⁴ Perret, C.⁵ Zaslavsky, A.⁶ Cristoloveanu, S.⁷

4
- 0033732282
- Y. Taur: IEEE Electron Device Lett. 21 (2000) 245.
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 245
- Taur, Y.¹

5
- 0004022746
- SILVACO
- ATLAS User's Manual, SILVACO, 2000.
- (2000) ATLAS User's Manual

6
- 0036923255
- P. Ranade, Y.-K. Choi, D. Ha, A. Agarwal, M. Ameen and T.-J. King: IEDM Tech. Dig. (2002) p. 363.
- (2002) IEDM Tech. Dig. , pp. 363
- Ranade, P.¹ Choi, Y.-K.² Ha, D.³ Agarwal, A.⁴ Ameen, M.⁵ King, T.-J.⁶

7
- 0036160670
- R. Lin, L. Qiang, P. Ranade, T.-J. King and C. Hu: IEEE Electron Device Lett. 23 (2002) 49.
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 49
- Lin, R.¹ Qiang, L.² Ranade, P.³ King, T.-J.⁴ Hu, C.⁵

8
- 0030241117
- F. Silveira, D. Flandre and P. G. A. Jespers: IEEE J. Solid-State Circuits 31 (1996) 1314.
- (1996) IEEE J. Solid-state Circuits , vol.31 , pp. 1314
- Silveira, F.¹ Flandre, D.² Jespers, P.G.A.³

9
- 21244500424
- V. Kilchytska, T.-M. Chung, G. Torrese, H. van Meer, K. De Meyer, J.-P. Raskin and D. Flandre: 203 Electrochemical Society Proc. Symp. on SOI Technology and Devices (2003) p. 225.
- (2003) 203 Electrochemical Society Proc. Symp. on SOI Technology and Devices , pp. 225
- Kilchytska, V.¹ Chung, T.-M.² Torrese, G.³ Van Meer, H.⁴ De Meyer, K.⁵ Raskin, J.-P.⁶ Flandre, D.⁷

10
- 21244475464
- G. Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, F. Danneville, S. Lepilliet and J.-P. Raskin: IEEE Electron Device Lett. 24 (2003) 198.
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 198
- Dambrine, G.¹ Raynaud, C.² Lederer, D.³ Dehan, M.⁴ Rozeaux, O.⁵ Vanmackelberg, M.⁶ Danneville, F.⁷ Lepilliet, S.⁸ Raskin, J.-P.⁹

11
- 0036772198
- H. Nakajima, S. Yanagi, K. Komiya and Y. Omura: IEEE Trans. Electron Devices 49 (2002) 1775.
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1775
- Nakajima, H.¹ Yanagi, S.² Komiya, K.³ Omura, Y.⁴

12
- 0031341419
- J.-P. Raskin, A. Viviani, D. Flandre and J.-P. Colinge: IEEE Trans. Electron Devices 44 (1997) 2252.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 2252
- Raskin, J.-P.¹ Viviani, A.² Flandre, D.³ Colinge, J.-P.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.