High frequency characterization of gate resistance in RF MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 98-100

  Cheng, Yuhua ^a   Matloubian, Mishel ^a  

^a Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; FREQUENCY DOMAIN ANALYSIS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CHANNEL LENGTH; GATE RESISTANCE;

MOSFET DEVICES;

EID: 0035249128     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902844     Document Type: Article

References (10)

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9. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. New York: McGraw-Hill, 1999.
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