Record RF performance of standard 90 nm CMOS technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 441-444

  Tiemeijer, L F ^a   Havens, R J ^a   De Kort, R ^a   Scholten, A J ^a   Van Langevelde, R ^a   Klaassen, D B M ^a   Sasse, G T ^c   Bouttement, Y ^b   Petot, C ^b   Bardy, S ^b   Gloria, D ^d   Scheer, P ^d   Boret, S ^d   Van Haaren, B ^d   Clement, C ^d   Larchanche, J F ^d   Lim, I S ^e   Zlotnicka, A ^e   Duvallet, A ^e  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

^d STMICROELECTRONICS   (France)

^e FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATION FREQUENCY; QUALITY FACTORS; STANDARD LOGIC; SYSTEM ON A CHIP (SOC); TUNING RANGE; CMOS TECHNOLOGY; MAXIMUM OSCILLATION FREQUENCY; PERFORMANCE; RF DEVICES; RF PERFORMANCE; TUNING RANGES; VARACTOR TUNING;

CODES (STANDARDS); INTEGRATED CIRCUIT LAYOUT; LOGIC CIRCUITS; MOS DEVICES; NATURAL FREQUENCIES; OPTIMIZATION; OSCILLATIONS; VARACTORS; CMOS INTEGRATED CIRCUITS;

CMOS INTEGRATED CIRCUITS; VARACTORS;

EID: 21644440315     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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