Bulk inversion in FinFETs and the implied insignificance of the effective gate width

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 145-147

  Kim, S H ^a   Fossum, J G ^a   Trivedi, V P ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GATES (TRANSISTOR); QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON;

BULK-INVERSIN CHARGE; FIN BULK; QUANTIZATION; THIN BODY;

FIELD EFFECT TRANSISTORS;

EID: 16244375848     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. J.-W. Yang and J. G. Fossum, "Infeasibility of nanoscale triplegate CMOS transistors," submitted to IEEE Trans. Electron Devices, Feb. 2004.
2. B. S. Doyle, et al., "High performance fully-depleted tri-gate CMOS transistors," IEEE Electron Device Lett., vol. 24, p. 263, Apr. 2003.
3. J. G. Fossum, et al., "Suppression of comer effects in triple-gate MOSFETs," IEEE Electron Device Lett., vol. 24, p. 745, Dec. 2003.
4. V. P. Trivedi and J. G. Fossum, "Scaling fully depleted SOI CMOS," IEEE Trans. Electron Devices, vol. 50, p. 2095, Oct. 2003.
5. Davinci-2003.06 User Guide: Synopsys, Inc., 2003.
6. A. Burenkov and J. Lorenz, "On the role of comer effect in FinFETs," Proc. European Workshop on Ultimate Integration of Silicon, p. 31, Mar. 2003.
7. J.-T. Park and J.-P. Colinge, "Multiple-gate SOI MOSFETs: device design guidelines," IEEE Trans. Electron Devices, vol. 49, p. 2222, Dec. 2002.
8. D. Esseni, et al., "An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode," IEEE Trans. Electron Devices, vol. 50, p. 802, Mar. 2003.
9. Medici-4.0 User's Manual: Synopsys, Inc., 2002.
10. L. Ge and J. G. Fossum, "Analytical modeling of quantization and volume inversion in thin Si-film double-gate MOSFETs," IEEE Trans. Electron Devices, vol. 49, p. 287, Feb. 2002.