High-frequency FinFET model

Electronics Letters

Volumn 41, Issue 7, 2005, Pages 443-444

  Wang, J ^a   Hutchens, C ^a   Popp, J ^b   Rowland, J ^b   Zhang, Y ^a  

^a Oklahoma State University   (United States)

^b Naval Command   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; COUPLINGS; DATA REDUCTION; ELECTRONICS INDUSTRY; INDUCTANCE; MICROELECTRONICS; MOSFET DEVICES; NATURAL FREQUENCIES; PROBES; SILICON ON INSULATOR TECHNOLOGY;

FINFET; MICROELECTRONIC INDUSTRY; POWER GAIN FREQUENCY; TRANSITION FREQUENCY;

GATES (TRANSISTOR);

EID: 17444418226     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057665     Document Type: Article

References (7)

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5. Kim, K., Fossum, J.G., and Chuang, C.-T.: 'Physical compact model for threshold voltage in short-channel double-gate devices'. 2003 IEEE Int. Conf. on Simulation of Semiconductor Processes and Devices, Piscataway, NJ, 2003, pp. 223-226
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