He induced nanovoids for point-defect engineering in B-implanted crystalline Si

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Bruno, E ^a   Mirabella, S ^a   Priolo, F ^a   Napolitani, E ^b   Bongiorno, C ^c   Raineri, V ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; ION IMPLANTATION; POINT DEFECTS; SILICON; SILICON WAFERS; SUPERSATURATION;

ELECTRIC ACTIVATION; NANOVOID LAYERS; POINT DEFECT DISTRIBUTIONS;

CRYSTALLINE MATERIALS;

EID: 33847714711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2427101     Document Type: Article

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