Strong segregation gettering of transition metals by implantation-formed cavities and boron-suicide precipitates in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 120, Issue 1-4, 1996, Pages 43-50

  Myers, S M ^a   Petersen, G A ^a   Follstaedt, D M ^a   Headley, T J ^a   Michael, J R ^a   Seager, C H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ION BOMBARDMENT; ION IMPLANTATION; PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; TRANSITION METALS;

GETTERING;

SEMICONDUCTING SILICON;

EID: 0030566508     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00476-4     Document Type: Article

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