A simple model for boron trapping by He implantation extended defects in Si: The role of boron diffusivity

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 291-296

  Cayrel, F ^a,b   Alquier, D ^a   Mathiot, D ^c   Ventura, L ^a   Vincent, L ^d   Gaudin, G ^a   Jerisian R ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b STMICROELECTRONICS   (France)

^c CNRS   (France)

^d LAAS CNRS   (France)

Author keywords

Boron; Cavities; Gettering; Helium; Ion implantation

Indexed keywords

ANNEALING; BORON; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); GROWTH (MATERIALS); HELIUM; ION IMPLANTATION; MATHEMATICAL MODELS; RATE CONSTANTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

CAVITIES; GETTERING;

SILICON WAFERS;

EID: 1042277331     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.049     Document Type: Conference Paper

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