Boron gettering on cavities induced by helium implantation in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 183, Issue 3-4, 2001, Pages 318-322

  Roqueta, F ^a,b   Alquier, D ^a,b   Ventura, L ^a   Dubois, Ch ^c   Jerisian R ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

Boron; Cavities; Gettering; Helium; Ion implantation

Indexed keywords

ANNEALING; BORON; ELECTRON TRAPS; GETTERS; HELIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

HELIUM IMPLANTATION;

ION IMPLANTATION;

EID: 0035478056     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00718-2     Document Type: Article

References (12)

1. Properties of crystalline silicon