Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp/2

Applied Physics Letters

Volumn 77, Issue 24, 2000, Pages 3932-3934

  Krause Rehberg, R ^a   Borner F ^a   Redmann, F ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000525155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1332814     Document Type: Article

References (15)

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