Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 2, 2000, Pages 142-145

  Wang, Shuangbao ^a   Zhu, Peiran ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CRYSTAL LATTICES; DIFFUSION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; HELIUM; HYDROGEN; ION IMPLANTATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING;

CARRIER PROFILE; LATTICE QUALITY; SPREADING RESISTANCE MEASUREMENTS; TRANSIENT ENHANCED DIFFUSION;

SILICON WAFERS;

EID: 0033877698     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00489-4     Document Type: Article

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