Carrier concentration and mobility in B doped Si1-xGe x

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 49-52

  Romano, L ^a   Napolitani, E ^b   Privitera, V ^c   Scalese, S ^c   Terrasi, A ^a   Mirabella, S ^a   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c CNR IMM   (Italy)

Author keywords

Boron; Hall scattering factor; Mobility; Silicon germanium

Indexed keywords

BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS;

DRIFT MOBILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0042513602     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00621-9     Document Type: Conference Paper

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