Lifetime control in silicon devices by voids induced by He ion implantation

Journal of Applied Physics

Volumn 79, Issue 12, 1996, Pages 9012-9016

  Raineri, V ^a   Fallica, G ^b   Libertino, S ^c  

^a CNR IMETEM   (Italy)

^b Corimme ^*  (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001044615     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362633     Document Type: Article

References (14)

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