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Applied Physics A: Materials Science and Processing

Volumn 67, Issue 6, 1998, Pages 727-730

Dome-to-pyramid transition induced by alloying of Ge islands on Si(001)

(4) Kamins, T I a Medeiros Ribeiro, G a Ohlberg, D A A a Williams, R Stanley a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ANNEALING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; NANOSTRUCTURED MATERIALS; SILICON WAFERS; STRAIN; STRESS ANALYSIS;

ISLAND GROWTH;

SEMICONDUCTING GERMANIUM;

EID: 0032292334 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050845 Document Type: Article

Times cited : (88)

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