Functional oxide nanobelts: Materials, properties and potential applications in nanosystems and biotechnology

Annual Review of Physical Chemistry

Volumn 55, Issue , 2004, Pages 159-196

  Wang, Zhong Lin ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

Field effect transistor; Nanocantilever; Nanoresonator; Nanoring; Nanosensor; Nanospring; Piezoelectric nanobelt

Indexed keywords

BIOTECHNOLOGY; COMPOSITION; CRYSTALLOGRAPHY; FIELD EFFECT TRANSISTORS; FUNCTIONS; PIEZOELECTRIC DEVICES; RESONATORS; SENSORS; SINGLE CRYSTALS;

NANOCANTILEVER; NANORESONATOR; NANORING; NANOSENSOR; NANOSPRING; PIEZOELECTRIC NANOBELT;

NANOSTRUCTURED MATERIALS;

OXIDE; ZINC OXIDE;

BIOTECHNOLOGY; CHEMISTRY; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; ELECTRONICS; MATERIALS; METHODOLOGY; NANOTECHNOLOGY; RAMAN SPECTROMETRY; REVIEW; SEMICONDUCTOR; SURFACE PROPERTY;

BIOTECHNOLOGY; ELECTROCHEMISTRY; MANUFACTURED MATERIALS; MICROSCOPY, ELECTRON; MINIATURIZATION; NANOTECHNOLOGY; OXIDES; SEMICONDUCTORS; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES; ZINC OXIDE;

EID: 3342937662     PISSN: 0066426X     EISSN: None     Source Type: Book Series    
DOI: 10.1146/annurev.physchem.55.091602.094416     Document Type: Review

References (119)

1. Wang ZL, ed. 2003. Nanowires and Nanobelts, Vol. I. Metal and Semiconductor, Nanowires. New York: Kluwer Academic
2. Wang ZL, ed. 2003. Nanowires and Nanobelts, Vol. II. Nanowires and Nanobelts of Functional Materials, New York: Kluwer Academic
3. Iijima S. 1991. Nature 354:56-58
4. Rothschild A, Sloan J, Tenne R. 2000. J. Am. Chem. Soc. 122:5169-79
5. Tenne R, Homyonfer M, Feldman Y. 1998. Chem. Mater. 10:3225-38
6. Saito Y, Matsumoto T. 1998. Nature 392:237-37
7. Gao PX, Wang ZL, 2003. J. Am. Chem. Soc. 125:11299-305
8. Trentler TJ, Hickman KM, Goel SC, Viano AM, Gibbons PC, Buhro WE. 1995. Science 270:1791-94
9. Morales AM, Lieber CM. 1998. Science 279:208-11
10. Lee ST, Wang N, Zhang YF, Tang YH. 1999. MRS Bull. 24:36-42
11. Chen CC, Yeh CC, Chen CH, Yu MY, Liu HL, et al. 2001. J. Am. Chem. Soc. 123:2791-98
12. Pan ZW, Dai ZR, Ma C, Wang ZL. 2002. J. Am. Chem. Soc. 124:1817-22
13. Dai HJ, Wong EW, Lu YZ, Fan SS, Lieber CM. 1995. Nature 375:769-72
14. Manna L, Scher EC, Alivisatos AP. 2000. J. Am. Chem. Soc. 122:12700-6
15. Huang MH, Wu YY, Feick H, Tran N, Weber E, Yang PD. 2001. Adv. Mater. 13:113-16
16. Lao JY, Huang JY, Wang DZ, Ren ZF. 2003. Nano Lett. 3:235-38
17. Zhang Y, Suenaga K, Colliex C, Iijima S. 1998. Science 281:973-75
18. Wang ZL, Dai ZR, Gao RP, Bai ZG, Gole JL. 2000. Appl. Phys. Lett. 77:3349-51
19. Pan ZW, Dai ZR, Wang ZL. 2001. Science 291:1947-50
20. Wang ZL, Pan ZW, Dai ZR. 2003. US Patent No. 6,586,095
21. Dai ZR, Pan ZW, Wang ZL. 2002. J. Phys. Chem. B 106:902-4
22. Dai ZR, Pan ZW, Wang ZL. 2002. J. Am. Chem. Soc. 124:8673-80
23. Wang ZL, Kang ZC. 1998. Functional and Smart Materials. New York: Plenum
24. Frankfutter Allgemeine Zeitung, June 3, 2003
25. Wen XG, Zhang WX, Yang SH. 2002. Nano Lett. 2:1397-401
26. Li YB, Bando Y, Golberg D, Kurashima K. 2002. Appl. Phys. Lett. 81:5048-50
27. Zhou J, Xu NS, Deng SZ, Chen J, She JC, Wang ZL. 2003. Adv. Mater. 15:1835-40
28. Li YB, Bando Y, Sato T. 2002. Chem. Phys. Lett. 359:141-45
29. Liu J, Cai J, Son YC, Gao QM, Suib SL, Aindow M. 2002. J. Phys. Chem. B 106:9761-68
30. Wen XG, Zhang WX, Yang SH. 2003. Langmuir 19:5898-903
31. Dai ZR, Pan ZW, Wang ZL. 2001. Solid State Commun. 118:351-54
32. Dai ZR, Gole JL, Stout JD, Wang ZL. 2002. J. Phys. Chem. B 106:1274-79
33. Dai ZR, Pan ZW, Wang ZL. 2003. Adv. Funct. Mater. 13:9-24
34. Kong XY, Wang ZL. 2003. Solid State Commun. 128:1-4
35. Li C, Zhang D, Han S, Liu X, Tang T, Zhou C. 2003. Adv. Mater. 15:143-46
36. Dai ZR, Pan ZW, Wang ZL. 2002. J. Phys. Chem. B. 106:902-4
37. Pan ZW, Dai ZR, Wang ZL. 2002. Appl. Phys. Lett. 80:309-11
38. Ma C, Moore D, Li J, Wang ZL. 2003. Adv. Mater. 15:228-31
39. Shi W, Peng H, Wang N, Li CP, Xu L, et al. 2001. J. Am. Chem. Soc. 123:11095-96
40. Gao PX, Wang ZL. 2002. J. Phys. Chem. B 106:12653-58
41. Wen JG, Lao JY, Wang DZ, Kyaw TM, Foo YL, Ren ZF. 2003. Chem. Phys. Lett. 372:717-22
42. He RR, Law M, Fan R, Kim F, Yang PD. 2002. Nano Lett. 2:1109-12
43. Kong XY, Ding Y, Wang ZL. 2004. J. Phys. Chem. 108:570-74
44. Ding Y, Kong XY, Wang ZL. 2003. J. Appl. Phys. 95:306-10
45. Sun YG, Mayers B, Xia YN. 2003. Nano Lett. 3:675-79
46. Wang XD, Li J, Gao PX, Summers CJ, Wang ZL. 2002. Adv. Mater. 14:1732-35
47. Wolf SA, Awschalom DD, Buhrmann RA, Daughton JM, von Molnar S, et al. 2001. Science 294:1488-95
48. Prinz GA. 1998. Science 282:1660-63
49. Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D. 2000. Science 287:1019-22
50. Ronning C, Gao PX, Ding Y, Wang ZL, Schwen D. 2003. Appl. Phys. Lett. In press
51. Huang MH, Wu Y, Feick H, Tran N, Weber E, Yang P. 2001. Adv. Mater. 13:11316
52. Gao PX, Ding Y, Wang ZL. 2003. Nano Lett. 3:1315-20
53. Arnold SM, Kounce SE. 1956. J. Appl. Phys. 27:964-66
54. Frank FC. 1949. Discus. Faraday Soc. 5:48-54
55. Wagner RS, Ellis WC. 1964. Appl. Phys. Lett. 4:89-91
56. Duan XF, Lieber CM. 2000. Adv. Mater. 12:298-302
57. Yu DP, Xing YJ, Hang QL, Yan HF, Xu J, et al. 2001. Physica E 9:305-9
58. Choi YC, Kim WS, Park YS, Lee SM, Bae DJ, et al. 2000. Adv. Mater. 12:746-50
59. Han WQ, Kohler-Redlich P, Ernst F, Rühle M. 2000. Solid State Commun. 115:527-29
60. Liang C, Meng G, Lei Y, Phillipp F, Zhang L. 2001, Adv. Mater. 13:1330-33
61. Holmes JD, Johnston KP, Doty RC, Korgel BA. 2000. Science 287:1471-73
62. Wang N, Tang YH, Zhang YF, Lee CS, Bello I, Lee ST. 1999. Chem. Phys. Lett. 299:237-42
63. Yin Y, Zhang G, Xia Y. 2002. Adv. Funct. Mater. 12:293-298
64. Yang PD, Lieber CM. 1997. J. Mater. Res. 12:2981-96
65. Wang YW, Liang CH, Meng GW, Peng XS, Zhang LD. 2002. J. Mater. Chem. 12:651-53
66. Wang ZL, Gao RP, Gole JL, Stout JD. 2000. Adv. Mater. 12:1938-41
67. Cabrera N, Burton WK. 1949. Discus. Faraday Soc. 5:40-48
68. Sears GW. 1955. Acta Metall. 3:361-66
69. Blakely JM, Jackson KA. 1962. J. Chem. Phys. 37:428-30
70. Wang ZL, Kong XY, Zuo JM. 2003. Phys. Rev. Lett. 91:185502
71. Morrison SR. 1982. Sens. Actuators 2:329-36
72. Sharma RK, Chan PCH, Tang Z, Yan G, Hsing IM, Sin JKO. 2001. Sens. Actuators 572:160-66
73. Hahn SH, Barsan N, Weimar U. 2001. Sens. Actuators B 78:64-68
74. Lin HM, Tzeng SJ, Hsiau PJ, Tsai WL. 1998. NanoStr. Mater. 10:465-77
75. Arnold MS, Avouris Ph, Pan ZW, Wang ZL. 2003. J. Phys. Chem. B 107:659-63
76. Cui Y, Lieber CM. 2001. Science 291: 851-54
77. Collins PG, Arnold MS, Avouris Ph. 2001. Science 292:706-9
78. Kong J, Franklin N, Wu C, Pan S, Cho KJ, Dai H. 2000. Science 287:622-25
79. Avouris Ph. 2002. Chem. Phys. 281:429-45
80. Advani GN, Kluge-Weiss P, Longini RL, Jordan AG. 1980. Int. J. Electron. 48:403-11
81. Samson S, Fonstad CG. 1973. J. Appl. Phys. 44:4618-21
82. Kamp B, Merkle R, Maier J. 2001. Sens. Actuators B 77:534-42
83. Göpel W, Schierbaum K, Wiemhöfer HD. 1989. Solid State Ionics 32:440-50
84. Mizusaki J, Koinuma H, Shimoyama JI, Kawasaki M, Fueki K. 1990. J. Solid State Chem. 88:443-50
85. Zhang DH. 1996. Mater. Chem. Phys. 45:248-52
86. Bonasewicz P, Hirschwald W, Neumann G. 1986. J. Electrochem. Soc. 133:2270-78
87. Shapira Y, Cox SM, Lichtma D. 1976. Surf. Sci. 54:43-59
88. Bai XD, Wang EG, Gao PX, Wang ZL. 2003. Nano. Lett. 3:1147-50
89. Comini E, Faglia G, Sberveglieri G, Pan ZW, Wang ZL. 2002. Appl. Phys. Lett. 81:1869-71
90. Kim P, Shi L, Majumdar A, McEuen PL. 2001. Phys. Rev. Lett. 87:215502-5
91. Schwab K, Henriksen EA, Worlock JM, Roukes ML. 2000. Nature 404:974-77
92. Shi L, Hao Q, Yu C, Kim D, Mingo N, et al. 2003. Appl. Phys. Lett. Submitted
93. Volz SG, Chen G. 1999. Appl. Phys. Lett. 75:2056-58
94. Sverdrup PG, Ju YS, Goodson KE. 2001. J. Heat Transf. 123:130-36
95. Poncharal P, Wang ZL, Ugarte D, de Heer WA. 1999. Science 283:1513-16
96. Wang ZL, Poncharal P, de Heer WA. 2000. Pure Appl. Chem. 72:209-19
97. Gao RP, Wang ZL, Bai ZG, de Heer WA, Dai LM, Gao M. 2000. Phys. Rev. Lett. 85:622-25
98. Meirovich L. 1986. Elements of Vibration Analysis. New York: McGraw-Hill. 2nd ed.
99. Bai XD, Wang EG, Gao PX, Wang ZL. 2003. Appl. Phys. Lett. 82:4806-8
100. Gao RP, Pan ZW, Wang ZL. 2001. Appl. Phys. Lett. 78:1757-59
101. Bai XD, Wang EG, Gao PX, Wang ZL. 2003. Nano Lett. 3:1147-50
102. Dai HJ, Hafner JH, Rinzler AG, Colbert DT, Smalley RE. 1996. Nature 384:147-50
103. Hughes W, Wang ZL. 2003. Appl. Phys. Lett. 82:2886-88
104. Dulub O, Boatner LA, Diebold U. 2002. Surf. Sci. 519:201-17
105. Meyer B, Marx D. 2003. Phys. Rev. B 67:035403-1-11
106. Tasker PW. 1979. J. Phys. C: Solid State Phys. 12:4977-84
107. Dulub O, Diebold U, Kresse G. 2003. Phys. Rev. Lett. 90:016102
108. Wander A, Schedin F, Steadman P, Norris A, McGrath R, et al. 2001. Phys. Rev. Lett. 86:3811-14
109. Staemmler V, Fink K, Meyer B, Marx D, Kunat M, et al. 2003. Phys. Rev. Lett. 90:106102-1
110. Dal Corso A, Posternak M, Resta R, Baidereschi A. 1994. Phys. Rev. B 50:10715-21
111. Bernardini F, Florentini V, Vanderbilt D. 1997. Phys. Rev. B 56:10024-27
112. Kong XY, Wang ZL. 2003. Nano Lett. 3:1625-31
113. Amelinckx S, Zhang XB, Bernaerts D, Zhang XF, Ivanov V, Nagy JB. 1994. Science 265:635-39
114. Martel R, Shea HR, Avouris P. 1999. Nature 398:299
115. Sano M, Kamino A, Okamura J, Shinkai J. 2001. Science 293:1299-301
116. Zhang HF, Wang CM, Wang LS. 2002. Nano Lett. 2:941-44
117. Gao RP, Wang ZL, Fan SS. 2000. J. Phys. Chem. B 104:1227-34
118. Tian ZR, Voigt JA, Liu J, Mckenzie B, Mcdermott MJ, 2002. J. Am. Chem. Soc. 124:12954-55
119. Hashimoto S, Yamaguchi A. 1996. J. Am. Ceram. Soc. 79:1121