Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5150-5152

  Lenz, A ^a   Timm, R ^a   Eisele, H ^a   Hennig, Ch ^a   Becker, S K ^a   Sellin, R L ^a   Pohl, U W ^a   Bimberg, D ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WETTING;

ATOMIC RESOLUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0346034890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533109     Document Type: Article

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