Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5027-5035

  Aubertine, D B ^a   Mander, M A ^a   Ozguven, N ^a   Marshall, A F ^a   McIntyre, P C ^a   Chu, J O ^b   Mooney, P M ^b  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENTHALPIES; BIAXIAL STRAINS; CONCENTRATION DEPENDENCE; GE DIFFUSION; LITERATURE DATA; LOW CONCENTRATIONS; SI-GE ALLOYS; SI/SIGE; SI/SIGE MULTI-LAYER; TIME-DEPENDENT STRAINS;

ENTHALPY; GERMANIUM; SUPERLATTICES; X RAY DIFFRACTION;

SILICON ALLOYS;

EID: 18744371598     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1508424     Document Type: Article

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