Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 753191-753196

  Kolobov, Alexander V ^a   Oyanagi, Hiroyuki ^a   Wei, Shiqiang ^b   Brunner, Karl ^c   Abstreiter, Gerhard ^c   Tanaka, Kazunobu ^d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c WALTER SCHOTTKY INSTITUT   (Germany)

^d JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON DERIVATIVE;

ABSORPTION SPECTROSCOPY; ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; OXIDATION; PHASE TRANSITION; PHOTOLUMINESCENCE; QUANTUM MECHANICS; STRESS STRAIN RELATIONSHIP; TEMPERATURE DEPENDENCE; X RAY ANALYSIS;

EID: 4244182686     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075319     Document Type: Article

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